S2. SINGLE CRYSTALS MATERIALS
S100 |
Melt Growth of SiGe Bulk Crystals with Uniform Composition and SiGe Multicrystals with Microscopic Compositional Distribution for New Si/SiGe Heterostructural Solar Cells |
Kazuo Nakajima, Kozo Fujiwara, Yukinaga Azuma, Noritaka Usami, Toru Ujihara, and Gen Sazaki |
PL |
S101 |
On a New Crystal Growth Mechanism Producing Polar Materials by Configurational Entropy |
Jurg Hulliger, Thomas Wuest, Claire Gervais |
PL |
S172 |
Recent Topics of Single Crystal Growth with Novel Approach |
Tsuguo Fukuda, Akira Yoshikawa and Hiroki Sato |
PL |
S243 |
Step Bunching and Solution Flow |
A.A.Chernov |
PL |
2S065 |
Bubble Distribution and Density in Shaped Sapphire Crystals |
O.Bunoiu, T.Duffar, F.Theodore, J.L.Santailler, I. Nicoara |
I |
2S127 |
In Situ Investigations of Collective Processes at KDP Crystal Growth from Solutions |
V.I.Bredikhin, G.L.Galushkina, S.P.Kuznetsov, A.A.Kulagin, O.A.Malshakova |
I |
S252 | Numerical Modelling of Crystal Growth on Different Scales | W.Miller | I |
S006 |
Molecule Formation among Impurity Atoms in Silicon and Possibilities of Creating Principally New Technology of Obtaining Materials with Controlled Parameters |
Bakhadirkhanov M.K., Norkulov N., Sirodjev S., Toshbaev A., Arzikulova M., Kadirova F., Sodikov U. |
O |
2S038 |
Active Raman Media - SrWO4:Nd3+, BaWO4:Nd3+ (Growth and Characterization) |
I.S.Voronina, L.I.Ivleva, T.T.Basiev, P.G.Zverev, N.M.Polozkov |
O |
2S047 |
Trends in Crystal Growth of Rare Earth Borates |
N.I.Leonyuk |
O |
2S048 |
Hydrothermal Synthesis and Morphology of Bi4Si3O12 Single Crystals |
D.E.Kozhbakhteeva, A.A. Mar'in, N.I.Leonyuk |
O |
2S055 |
Crystal Growth of KMg-Fluoride |
P.V.Nefedov, B.A.Dorogovin, B.I.Zadneprovski, N.I.Leonyuk |
O |
2S092 |
Radiative Recombination in Electron-Irradiated GaP Crystals |
A.V.Gomonnai, D.B.Goyer, O.O.Goushcha, Yu.M.Azhniuk, I.G.Megela, M.Kranjcec |
O |
5S115 |
Optical Control of Domain Structures in Lithium Tantalate Crystals |
A.R.Poghosyan |
O |
2S126 |
KDP, KD*P Crystals: From Growth of Crystals to Growth of Crystal Elements |
V.I.Bespalov, V.I.Bredikhin, V.V.Zil'berberg, V.P.Ershov |
O |
S164 |
Prismatic faces of KDP Crystal Kinetic and Mechanism of Growth from Solutions |
H.V.Alexandru, S.Antohe |
O |
S031 |
Hydrogen Intercalation of InSe and GaSe Semiconductors |
Z.D.Kovalyuk, M.M.Pyrlya, V.B.Boledzyuk |
PO |
2S045 |
Flux Growth and Characterization of YAl3(BO3)4 Crystals Doped with Pr, Ho, Tm, Yb |
E.V.Koporulina, O.V.Pilipenko, N.I.Leonyuk |
PO |
2S049 |
Hydrothermal Growth and Characterization of Optical Calcite Single Crystals |
I.V.Nefyodova, N.I.Leonyuk |
PO |
2S053 |
Relationship Between Growth Conditions and Thermal Stability of Ladder-Type Crystals Ca6.7Sr7.0Bi0.3)Cu23.0Ox and Ca6.9Sr6.8Bi0.3)Cu23.3Ox |
V.V.Maltsev, N.I.Leonyuk |
PO |
5S054 |
Tantalate Systems Relating to Alternative Substrate Materials for Heteroepitaxial Growth of GaN and LiNbO3 Thin Films |
E.A.Volkova, V.V.Maltsev, N.I.Leonyuk |
PO |
5S062 |
XPS Studies on n-Type GaAs |
C.Logofatu, M.Lazarescu, R.V.Ghita, C.Negrila, A.S.Manea |
PO |
6S075 |
Thermodynamics of Binary Melts of Transition Metals: Tight Binding Approach |
Alexey P.Malygin, Dmitri V.Alexandrov and Nikolay A.Vatolin |
PO |
2S079 |
On the Nature of Conductivity Anisotropy in Undoped Indium Selenide |
P.I.Savitskii, A.V.Konstantinovich and Z.D.Kovalyuk |
PO |
2S094 |
Compositional Variation of Optical and Refractometric Parameters of γ1-(GaxIn1-x)2Se3 Mixed Crystals |
I.P.Studenyak, M.Kranjcec, O.M.Borets |
PO |
6S098 |
Alkali Metals Melts Thermodynamics |
N.E.Dubinin |
PO |
2S108 |
Structure of the Cation Sublattice and Optical Damage in Lithium Niobate Crystals of Different Composition |
N.Sidorov, M.Palatnikov, P.Chufirev, I.Biryukova, K.Bormanis |
PO |
S110 |
AC Conductivity Spectra of KCl:In Crystals. Temperature Dependent Deviations from the Summerfield Scaling |
Ana Ioanid |
PO |
5S116 |
Transient Currents in Photochromic Lithium Niobate Crystals |
A.S.Bagdassarian, R.K.Hovsepyan, A.R.Poghosyan |
PO |
S122 |
Ultrasonic Nondestructive Evaluation in the Si-n Sample |
P.Petculescu, G.Prodan |
PO |
5S131 |
Ultrasonic Investigation for the Si-n Sample |
Petre Petculescu, Jeanina Matei |
PO |
S156 |
Molecular Dynamics Simulations of the Backscattering of Ar Ions from an Al Crystalline Lattice |
M.Ciobanu, V.Babin, N.D.Nicolae, C.Talianu, C.Morosanu |
PO |
2S177 |
Structural Features of Fluoride-Ion Transport in Pb0.67Cd0.33F2 Single Crystals |
V.Trnovcova, P.P.Fedorov, M.Ozvoldova, I.I.Buchinskaya, A.Skubla, E.A.Zhurova |
PO |
S207 |
Oxygen Nucleation in Carbon-Rich Single Crystal Silicon |
F. Stanculescu |
PO |
2S231 |
Role of Oxygen and Carbon Impurities in the Radiation Resistance of Silicon Detectors |
S.Lazanu, I.Lazanu |
PO |
S265 | Single Crystalline Sapphire Growth by Non Conventional Czochralski Method | C.E.A.Grigorescu, A.S.Manea, C.Logofatu, I.Licea | PO |
S266 | In-situ Eddy Current Measurements on Growing Semiconductor Crystals | A.Iuga, C.Negrila, A.S.Manea, M.F.Lazarescu, C.Logofatu, R.V.Ghita | PO |
S275 | Recent Progress in SiC Growth | E.K.Polychroniadis, A.Andreadou, A.Mantzari, D.Panknin, J.Wollweber | PO |
S278 | Mechanism of KDP Growth from Solution | H.V.Alexandru, C.Berbecaru, R.C.Radulescu | PO |
S279 | Influence of Impurities on the Growth Kinetic of KDP | H.V.Alexandru, C.Berbecaru, R.C.Radulescu, F.Stanculescu, B.Logofatu | PO |